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| SPICE MODEL: BSS84 Lead-free BSS84 P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features * * * * * * * * * * * * * * * * Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free/RoHS Compliant (Note 3) Qualified to AEC-Q101 Standards for High Reliability E G TOP VIEW S D G H K J L M D B C A SOT-23 Dim A B C D E G H J K L M a Source Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0 Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8 Mechanical Data Case: SOT-23 Case Material: UL Flammability Classification Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish). Terminal Connections: See Diagram Marking (See Page 2): K84 Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approximate) Drain Gate All Dimensions in mm Maximum Ratings Drain-Source Voltage @ TA = 25C unless otherwise specified Symbol VDSS VDGR Continuous Continuous VGSS ID Pd RqJA Tj, TSTG Value -50 -50 20 -130 300 417 -55 to +150 Units V V V mA mW C/W C eristic Drain-Gate Voltage RGS 20KW Gate-Source Voltage Drain Current (Note 1) Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time @ TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) gFS Ciss Coss Crss tD(ON) tD(OFF) Min -50 3/4 3/4 3/4 3/4 -0.8 3/4 0.05 3/4 3/4 3/4 3/4 3/4 Typ 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 10 18 Max 3/4 -15 -60 -100 10 -2.0 10 3/4 45 25 12 3/4 3/4 Unit V A A nA nA V W S pF pF pF ns ns VDD = -30V, ID = -0.27A, RGEN = 50W, VGS = -10V VDS = -25V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = -250A VDS = -50V, VGS = 0V, TJ = 25C VDS = -50V, VGS = 0V, TJ = 125C VDS = -25V, VGS = 0V, TJ = 25C VGS = 20V, VDS = 0V VDS = VGS, ID = -1mA VGS = -5V, ID = -0.100A VDS = -25V, ID = -0.1A Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration test pulse used to minimize self-heating effect. 3. No purposefully added lead. DS30149 Rev. 11 - 2 1 of 3 www.diodes.com BSS84 a Diodes Incorporated Ordering Information Device BSS84-7-F Notes: (Note 4) Packaging SOT-23 Shipping 3000/Tape & Reel 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K84 Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L March 3 2001 M Apr 4 K84 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September 2002 N May 5 YM 2003 P Jun 6 2004 R Jul 7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D -600 350 TA = 25 C VGS = -5V ID, DRAIN SOURCE CURRENT (mA) PD, POWER DISSIPATION (mW) -500 300 250 200 150 100 50 0 -400 -4.5V -300 -3.5V -200 -3.0V -100 0 0 -1 -2 -3 -4 -2.5V 0 25 50 75 100 125 150 175 200 -5 TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs Ambient Temperature VDS, DRAIN SOURCE (V) Fig. 2, Drain Source Current vs. Drain Source Voltage DS30149 Rev. 11 - 2 2 of 3 www.diodes.com BSS84 -1.0 10 9 -0.8 8 TA = -55 C ID, DRAIN CURRENT (A) 7 6 TA = 25 C -0.6 5 4 3 -0.4 TA = 125 C -0.2 2 1 TA = 125 C TA = 25 C 0.0 0 0 -1 -2 -3 -4 -5 -6 -7 -8 0 -1 -2 -3 -4 -5 VGS, GATE-TO-SOURCE VOLTAGE (V) Fig. 3, Drain Current vs. Gate Source Voltage 15 VGS = -10V ID = -0.13A 12 VGS, GATE TO SOURCE (V) Fig. 4, On Resistance vs. Gate Source Voltage 25.0 20.0 VGS = -3.5V VGS = -3V 9 15.0 VGS = -4.5V VGS = -5V 6 10.0 VGS = -4V VGS = -6V 3 5.0 VGS = -8V VGS = -10V 0 -50 -25 0 25 50 75 100 125 150 0.0 TJ, JUNCTION TEMPERATURE (C) Fig. 5, On-Resistance vs. Junction Temperature 0.0 -0.2 -0.4 -0.6 -0.8 1.0 ID, DRAIN CURRENT (A) Fig. 6, On-Resistance vs. Drain Current IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated. DS30149 Rev. 11 - 2 3 of 3 www.diodes.com BSS84 |
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